Part Number
|
MGFC38V5867 |
Manufacturer
|
Mitsubishi |
Description
|
C band internally matched power GaAs FET |
Published
|
Apr 29, 2005 |
Detailed Description
|
C band internally matched power GaAs FET
MGFC38V5867
5.8 – 6.75 GHz BAND / 6W
DESCRIPTION
The MGFC38V5867 is an inte...
|
Datasheet
|
MGFC38V5867
|
Overview
C band internally matched power GaAs FET
MGFC38V5867
5.
8 – 6.
75 GHz BAND / 6W
DESCRIPTION
The MGFC38V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.
8 – 6.
75 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class A operation Internally matched to 50(ohm) system High output power
P1dB=6W (TYP.
) @f=5.
8 – 6.
75GHz High power gain
GLP=10dB (TYP.
) @f=5.
8 – 6.
75GHz
APPLICATION
VSAT
2MIN
12.
9 +/-0.
2
2MIN
OUTLINE DRAW ING Unit : millimeters
21.
0 +/-0.
3 (1) 0.
6 +/-0.
15
(2) (2) R-1.
6
(3) 10.
7 17.
0 +/-0.
2
11.
3
0.
1 2.
6 +/-0.
2
4.
5 +/-0.
4 1.
6
0.
2
12.
0
RECOMMENDED BIAS CONDITIONS
VDS=10V I...
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