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MGFC38V5867

Mitsubishi
Part Number MGFC38V5867
Manufacturer Mitsubishi
Description C band internally matched power GaAs FET
Published Apr 29, 2005
Detailed Description < C band internally matched power GaAs FET > MGFC38V5867 5.8 – 6.75 GHz BAND / 6W DESCRIPTION The MGFC38V5867 is an inte...
Datasheet PDF File MGFC38V5867 PDF File

MGFC38V5867
MGFC38V5867

Overview
< C band internally matched power GaAs FET > MGFC38V5867 5.
8 – 6.
75 GHz BAND / 6W DESCRIPTION The MGFC38V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.
8 – 6.
75 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=6W (TYP.
) @f=5.
8 – 6.
75GHz  High power gain GLP=10dB (TYP.
) @f=5.
8 – 6.
75GHz APPLICATION  VSAT 2MIN 12.
9 +/-0.
2 2MIN OUTLINE DRAW ING Unit : millimeters 21.
0 +/-0.
3 (1) 0.
6 +/-0.
15 (2) (2) R-1.
6 (3) 10.
7 17.
0 +/-0.
2 11.
3 0.
1 2.
6 +/-0.
2 4.
5 +/-0.
4 1.
6 0.
2 12.
0 RECOMMENDED BIAS CONDITIONS  VDS=10V  I...


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