Part Number
|
MGFC39V5964A |
Manufacturer
|
Mitsubishi |
Description
|
C band internally matched power GaAs FET |
Published
|
Apr 29, 2005 |
Detailed Description
|
C band internally matched power GaAs FET
MGFC39V5964A
5.9 – 6.4 GHz BAND / 8W
11.3
DESCRIPTION
The MGFC39V5964A is...
|
Datasheet
|
MGFC39V5964A
|
Overview
C band internally matched power GaAs FET
MGFC39V5964A
5.
9 – 6.
4 GHz BAND / 8W
11.
3
DESCRIPTION
The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.
9 – 6.
4 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class A operation Internally matched to 50(ohm) system High output power
P1dB=8W (TYP.
) @f=5.
9 – 6.
4GHz High power gain
GLP=10.
5dB (TYP.
) @f=5.
9 – 6.
4GHz High power added efficiency
P.
A.
E.
=30% (TYP.
) @f=5.
9 – 6.
4GHz Low distortion [item -51]
IM3=-45dBc (TYP.
) @Po=28dBm S.
C.
L
APPLICATION
item 01 : 5.
9 – 6.
4 GHz band power amplifier item 51 : 5.
9 – 6.
4 GHz band digital radi...
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