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MGFC39V5964A

Mitsubishi
Part Number MGFC39V5964A
Manufacturer Mitsubishi
Description C band internally matched power GaAs FET
Published Apr 29, 2005
Detailed Description < C band internally matched power GaAs FET > MGFC39V5964A 5.9 – 6.4 GHz BAND / 8W 11.3 DESCRIPTION The MGFC39V5964A is...
Datasheet PDF File MGFC39V5964A PDF File

MGFC39V5964A
MGFC39V5964A

Overview
< C band internally matched power GaAs FET > MGFC39V5964A 5.
9 – 6.
4 GHz BAND / 8W 11.
3 DESCRIPTION The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.
9 – 6.
4 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=8W (TYP.
) @f=5.
9 – 6.
4GHz  High power gain GLP=10.
5dB (TYP.
) @f=5.
9 – 6.
4GHz  High power added efficiency P.
A.
E.
=30% (TYP.
) @f=5.
9 – 6.
4GHz  Low distortion [item -51] IM3=-45dBc (TYP.
) @Po=28dBm S.
C.
L APPLICATION  item 01 : 5.
9 – 6.
4 GHz band power amplifier  item 51 : 5.
9 – 6.
4 GHz band digital radi...


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