Part Number
|
MGFC40V5258 |
Manufacturer
|
Mitsubishi |
Description
|
C band internally matched power GaAs FET |
Published
|
Apr 29, 2005 |
Detailed Description
|
C band internally matched power GaAs FET
MGFC40V5258
5.2 – 5.8 GHz BAND / 10W
DESCRIPTION
The MGFC40V5258 is an int...
|
Datasheet
|
MGFC40V5258
|
Overview
C band internally matched power GaAs FET
MGFC40V5258
5.
2 – 5.
8 GHz BAND / 10W
DESCRIPTION
The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.
2 – 5.
8 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Internally matched to 50(ohm) system • High output power
P1dB=10W (TYP.
) @f=5.
2 – 5.
8GHz • High power gain
GLP=9.
0dB (TYP.
) @f=5.
2 – 5.
8GHz • High power added efficiency
P.
A.
E.
=31% (TYP.
) @f=5.
2 – 5.
8GHz • Low distortion [item -51]
IM3=-45dBc (Typ.
) @Po=29.
0dBm S.
C.
L
APPLICATION
• item 01 : 5.
2 – 5.
8 GHz band microwave high power amplifier • item 51 : 5.
2 – 5.
8 GHz band digital radio commun...
Similar Datasheet