DatasheetsPDF.com

MGFC40V5258

Mitsubishi
Part Number MGFC40V5258
Manufacturer Mitsubishi
Description C band internally matched power GaAs FET
Published Apr 29, 2005
Detailed Description < C band internally matched power GaAs FET > MGFC40V5258 5.2 – 5.8 GHz BAND / 10W DESCRIPTION The MGFC40V5258 is an int...
Datasheet PDF File MGFC40V5258 PDF File

MGFC40V5258
MGFC40V5258

Overview
< C band internally matched power GaAs FET > MGFC40V5258 5.
2 – 5.
8 GHz BAND / 10W DESCRIPTION The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.
2 – 5.
8 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES Internally matched to 50(ohm) system • High output power P1dB=10W (TYP.
) @f=5.
2 – 5.
8GHz • High power gain GLP=9.
0dB (TYP.
) @f=5.
2 – 5.
8GHz • High power added efficiency P.
A.
E.
=31% (TYP.
) @f=5.
2 – 5.
8GHz • Low distortion [item -51] IM3=-45dBc (Typ.
) @Po=29.
0dBm S.
C.
L APPLICATION • item 01 : 5.
2 – 5.
8 GHz band microwave high power amplifier • item 51 : 5.
2 – 5.
8 GHz band digital radio commun...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)