MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ16110/D
Designer's
NPN Silicon Power
Transistors
SWITCHMODE Bridge Series
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specifically designed for use in half bridge and full bridge off line converters.
Excellent Dynamic Saturation Characteristics Rugged RBSOA Capability Collector–Emitter Sustaining Voltage — VCEO(sus) — 400 V Collector–Emitter Breakdown — V(BR)CES — 650 V State–of–Art Bipolar Power
Transistor Design Fast Inductive Switching: tfi = 25 ns (Typ) @ 100_C tc = 50 ns (Typ) @ 100_C tsv = 1 µs (Typ) @ 100_C • Ultrafast FBSOA Specified • 100_C Performance Specified for: RBSOA Inductive Load Switching Saturation Voltages Leakages MAXIMUM RATINGS
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