MCC
)HDWXUHV
• • •
omponents 21201 Itasca Street Chatsworth !"# $
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MJ413 MJ423 MJ431
High Collector-Emitter Voltage VCES=400V DC Current Gain Specified 3.
5A High Frequency Response to 2.
5 MHz
10 Amp
NPN Silicon Power
Transistors 125W
TO-3
E A N C
0D[LPXP5DWLQJV
• • •
Operating Temperature: -55°C to +150°C Storage Temperature: -55°C to +150°C Maximum Thermal Resistance: 1.
0 /W junction to case
:
Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Base Current
Symbol VCEX VCB VEB IC
Max 400 400 5.
0 10 2.
0 125 1.
0
Unit Vdc Vdc
U
D
K
Vdc Adc Adc Watts...