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MJ4032

ST Microelectronics
Part Number MJ4032
Manufacturer ST Microelectronics
Description COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Published May 7, 2005
Detailed Description MJ4032 MJ4035 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTAR...
Datasheet PDF File MJ4032 PDF File

MJ4032
MJ4032

Overview
MJ4032 MJ4035 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIERS s 1 2 TO-3 DESCRIPTION The MJ4035 is silicon epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case.
It is inteded for use in general purpose and amplifier applications.
The complementary PNP type is the MJ4032.
INTERNAL SCHEMATIC DIAGRAM R1 Typ.
= 6 KΩ R2 Typ.
= 55 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter PNP NPN V CBO V CEO V EBO IC IB P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max.
Operating Junction Temperature Value MJ4032 MJ4035 100 100 5 16 0.
5 150 -65 to 200 200 V V V A A W o o Unit C C For PNP types voltage and current values are negative.
June 1997 1/4 MJ4032 / MJ4035 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.
17 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEO I EBO Parameter Collector Cut-off Current (R BE = 1K Ω ) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 100 V V CE = 100 V V CE = 50 V V EB = 5 V I C = 100 mA I C = 10 A I C = 16 A I C = 10 A I C = 10 A I B = 40 mA I B = 80 mA V CE = 3 V V CE = 3 V 1000 100 2.
5 4 3 T c = 150 C o Min.
Typ.
Max.
1 5 3 5 Unit mA mA mA mA V V V V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage V CE(sat) ∗ V BE ∗ h FE ∗ Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.
5 % For PNP type voltage and current values are negative.
2/4 MJ4032 / MJ4035 TO-3 MECHANICAL DATA mm MIN.
A B C D E G N P R U V 11.
00 0.
97 1.
50 8.
32 19.
00...


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