MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE171/D
Complementary Plastic Silicon Power
Transistors
.
.
.
designed for low power audio amplifier and low current, high speed switching applications.
• Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182 • DC Current Gain — hFE = 30 (Min) @ IC = 0.
5 Adc hFE = 12 (Min) @ IC = 1.
5 Adc • Current–Gain — Bandwidth Product — fT = 50 MHz (Min) @ IC = 100 mAdc • Annular Construction for Low Leakages — ICBO = 100 nA (Max) @ Rated VCB MAXIMUM RATINGS
MJE171 MJE181 80 60 MJE172 MJE182 100 80
MJE171* MJE172*
NPN MJE181* MJE182*
*Motorola Preferred Device
PNP
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