MJE18002D2

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18002D2/D MJE18002D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP*, to design the state of art transistor dedicated...