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MJE18002

INCHANGE
Part Number MJE18002
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 27, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching ...
Datasheet PDF File MJE18002 PDF File

MJE18002
MJE18002

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current 2 A IBM Base Current-Peak 4 A PD Total Power Dissipation@TC=25℃ 100 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Rresistance,Junction to Case 1.
25 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.
5 ℃/W MJE18002 isc Website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJE18002 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA; IB=0 VCE(sat)-1 VCE(sat)-2 Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage IC= 0.
4 A ;IB= 40mA TC=125℃ IC= 1A ;IB= 0.
2 A TC=125℃ VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 2.
5A ;IB= 0.
5 A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 0.
4A; IB= 40mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= 1A; IB= 0.
2A ICBO Collector Cutoff Current VCB= 1000V,IE=0; TC=125℃ ICEO Collector Cutoff Current VCE= 450V; IB= 0 IEBO Emitter Cutoff Current VEB= 9V; IC= 0 hFE-1 DC Current Gain IC= 0.
2A ; VCE= 5V hFE-2 DC Current Gain IC= 1A ; VCE= 1V hFE-3 DC Current Gain IC= 10mA; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.
5A;VCE= 10V;ftest=1.
0MHz COB Output Capacitance IE= 0; VCB= 10V; ftest=1.
0MHz Switching Times Resistive Load,Duty Cycle≤10%,Pulse Wi...


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