MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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MJE18604D2
Advance Information
High Speed, High Gain Bipolar
NPN Power
Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network for 1600 V Applications
The MJE18604D2 is state–of–art High Speed High gain BIPolar
transistor (H2BIP).
Tight dynamic characteristics and lot to lot low spread (±150 ns on storage time) make it ideally suitable for light ballast applications.
Therefore, there is no more a need to guarantee an hfe window.
Main features: • Low Base Drive Requirement • High DC Current Gain (30 Typical) @ IC = 400 mA • Extremely Low Storage Time Min/Max Guarantees Due to...