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MJE18604D2

Motorola
Part Number MJE18604D2
Manufacturer Motorola
Description POWER TRANSISTORS
Published May 7, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18604D2/D MJE18604D2 Advance Information High Speed,...
Datasheet PDF File MJE18604D2 PDF File

MJE18604D2
MJE18604D2

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18604D2/D MJE18604D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network for 1600 V Applications The MJE18604D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).
Tight dynamic characteristics and lot to lot low spread (±150 ns on storage time) make it ideally suitable for light ballast applications.
Therefore, there is no more a need to guarantee an hfe window.
Main features: • Low Base Drive Requirement • High DC Current Gain (30 Typical) @ IC = 400 mA • Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active Antisaturation (H2BIP) Structure which Minimizes the Spread • Integrated Collector–Emitter Free Wheeling Diode Matched with the Power Transistor • Fully Characterized and Guaranteed Dynamic VCE(sat) • “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads POWER T...


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