MJE2955T
MJE2955T
General Purpose and Switching Applications
• DC Current Gain Specified to IC = 10 A • High Current Gain Bandwidth Product : fT = 2MHz (Min.
)
1
TO-220 2.
Collector 3.
Emitter
1.
Base
PNP Silicon
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value - 70 - 60 -5 - 10 -6 75 0.
6 150 - 55 ~ 150 Units V V V A A W W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCEO ICEO ICEX1 ICE...