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MJE2955T

Part Number	MJE2955T
Manufacturer	ON
Description	Complementary Silicon Plastic Power Transistors
Published	May 7, 2005
Detailed Description	MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in ge...
Datasheet	MJE2955T PDF File

Overview

MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications.
Features • High Current Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VCEO VCB VEB IC IB PD (Note 1) 60 70 5.
0 10 6.
0 75 0.
6 Vdc Vdc Vdc Adc Adc W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
Safe Area Curves are indicated by Figure 1.
Both limits are applicable and must be observed.
THERMAL CHARACTERISTICS Charac...

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