MJE700/701/702/703
MJE700/701/702/703
Monolithic Construction With Built-in BaseEmitter Resistors
• High DC Current Gain : hFE= 750 (Min.
) @ IC= -1.
5 and -2.
0A DC • Complement to MJE800/801/802/803
1
TO-126 2.
Collector 3.
Base
1.
Emitter
PNP Epitaxial Silicon Darlington
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector- Base Voltage : MJE700/701 : MJE702/703 Value - 60 - 80 - 60 - 80 -5 -4 - 0.
1 40 150 - 55 ~ 150 Unit s V V V V V A A W °C °C
R1 R2 E Equivalent Circuit C
B
Collector-Emitter Voltage : MJE700/701 : MJE702/703 Emitter- Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junc...