DatasheetsPDF.com

MJE701

PNP Epitaxial Silicon Darlington Transistor

Description

MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO V...

Fairchild

View MJE701 Datasheet

Similar Datasheet

MJE700 PNP Transistor - INCHANGE
MJE700 4.0 AMPERE DARLINGTON POWER TRANSISTORS - Motorola
MJE700 DARLINGTON POWER TRANSISTORS - ON
MJE700 PNP Epitaxial Silicon Darlington Transistor - Fairchild
MJE700 COMPLEMENTARY POWER DARLINGTON TRANSISTORS - Central Semiconductor
MJE700G Plastic Darlington Complementary Silicon Power Transistors - ON Semiconductor
MJE700T 4.0 AMPERE DARLINGTON POWER TRANSISTORS - Motorola
MJE700T POWER TRANSISTOR - Central Semiconductor
MJE700T PNP Transistor - INCHANGE
MJE701 PNP Epitaxial Silicon Darlington Transistor - Fairchild

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)