MJE800/801/802/803
MJE800/801/802/803
Monolithic Construction With Built-in BaseEmitter Resistors
• High DC Current Gain : hFE= 750 (Min.
) @ IC= 1.
5 and 2.
0A DC • Complement to MJE700/701/702/703
1
TO-126 2.
Collector 3.
Base
1.
Emitter
NPN Epitaxial Silicon Darlington
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature : MJE800/801 : MJE802/803 : MJE800/801 : MJE802/803 Value 60 80 60 80 5 4 0.
1 40 150 - 55 ~ 150 Units V V V V V A A W °C °C
R1 R2 E B Eq...