DatasheetsPDF.com

NE555


Part Number NE555
Manufacturer Fairchild
Title Single Timer
Description The LM555/NE555/SA555 is a highly stable controller capable of producing accurate timing pulses. With a monostable operation, the time delay is co...
Features
• High Current Drive Capability (200mA)
• Adjustable Duty Cycle
• Temperature Stability of 0.005%/°C
• Timing From µSec to Hours
• Turn off Time Less Than 2µSec Applications
• Precision Timing
• Pulse Generation
• Time Delay Generation
• Sequential Timing Description The LM555/NE555/SA555 is a high...

File Size 150.31KB
Datasheet NE555 PDF File






Similar Datasheet

NE5500179A : The NE5500179A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 4.8 V GSM1800 and GSM1900 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 29.5 dBm output power with 55% power added efficiency at 1.9 GHz under the 4.8 V supply voltage, or can deliver 27 dBm output power with 50% power added efficiency at 3.5 V by varying the gate voltage as a power control function. APPLICATIONS • DIGITAL CELLULAR PHONES • DIGITAL CORDLESS PHONES • OTHERS ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS CHARACTERISTIC.

NE5510179A : The NE5510179A is an N-Channel silicon power MOSFET specially designed as the transmission driver amplifier for 3.5 V GSM1800 and GSM 1900 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 29.5 dBm output power with 50% power added efficiency at 1.9 GHz under the 3.5 V supply voltage, or can deliver 29 dBm output power at 2.8 V by varying the gate voltage as a power control function. APPLICATIONS • DIGITAL CELLULAR PHONES: 3.5 V GSM 1800/GSM 1900 Class 1 Handsets • OTHERS: 1.6 - 2.0 GHz TDMA Applications ELECTRICAL CHARACTERISTICS (TA PART NUMBER PACKAGE OUTLINE SYMBOLS IGSS ID.

NE5510279A : The NE5510279A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.5 V GSM1800 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µ m WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 32 dBm output power with 45% power added efficiency at 1.8 GHz under the 3.5 V supply voltage, or can deliver 31 dBm output power at 2.8 V by varying the gate voltage as a power control function. APPLICATIONS • DIGITAL CELLULAR PHONES • OTHERS ELECTRICAL CHARACTERISTICS (TA PART NUMBER PACKAGE OUTLINE SYMBOLS IGSS IDSS VTH gm RDS(ON) BVDSS CHARACTERISTICS Gate to Source Leakage Current Drain to Source Lea.

NE5511279A : NEC's NE5511279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured using NEC's NEWMOS1 technology and housed in a surface mount package. This device can deliver 40.0 dBm output power with 48% power added efficiency at 900 MHz using a 7.5 V supply voltage. (TA = 25°C) MIN 38.5 − 42 − − − − − − − 1.0 − − 20 TYP 40.0 2.5 48 15.0 40.5 2.75 50 18.5 − − 1.5 5 2.3 24 MAX − − − − − − − − 100 100 2.0 − − − UNIT dBm A % dB dBm A % dB nA nA V °C/W S V TEST CONDITIONS f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm, IDSQ = 400 mA (RF OFF) Pin = 5 dBm f = 460 MHz, VDS = 7.5 V, Pin = 25 dBm, IDSQ = 400 mA (RF O.

NE5511279A : The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V Radio Systems. Dies are manufactured using our NEWMOS1 technology and housed in a surface mount package. This device can deliver 40.0 dBm output power with 48% power added efficiency at 900 MHz under the 7.5 V supply voltage. FEATURES • High output power • High power added efficiency • High linear gain • Surface mount package • Single supply : Pout = 40.0 dBm TYP. (f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm, IDset = 400 mA) : Pout = 40.5 dBm TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 25 dBm, IDset = 400 mA) : add = 48% TYP. (f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm.

NE5512 : The 5512 series of high-performance operational amplifiers provides very good input characteristics. These amplifiers feature low input bias and voltage characteristics such as a 108 op amp with improved CMRR and a high differential input voltage limit achieved through the use of a bias cancellation and PNP input circuits with collector-to-emitter clamping. The output characteristics are like those of a 741 op amp with improved slew rate and drive capability, yet have low supply quiescent current. PIN CONFIGURATIONS N Package OUTPUT 1 -INPUT 1 +INPUT 1 V1 2 3 4 TOP VIEW 8 7 6 5 V+ OUTPUT 2 -INPUT 2 +INPUT 2 APPLICATIONS • AC amplifiers • RC active filters • Transducer amplifiers • DC gain.

NE5512D : The 5512 series of high-performance operational amplifiers provides very good input characteristics. These amplifiers feature low input bias and voltage characteristics such as a 108 op amp with improved CMRR and a high differential input voltage limit achieved through the use of a bias cancellation and PNP input circuits with collector-to-emitter clamping. The output characteristics are like those of a 741 op amp with improved slew rate and drive capability, yet have low supply quiescent current. PIN CONFIGURATIONS N Package OUTPUT 1 -INPUT 1 +INPUT 1 V1 2 3 4 TOP VIEW 8 7 6 5 V+ OUTPUT 2 -INPUT 2 +INPUT 2 APPLICATIONS • AC amplifiers • RC active filters • Transducer amplifiers • DC gain.

NE5512N : The 5512 series of high-performance operational amplifiers provides very good input characteristics. These amplifiers feature low input bias and voltage characteristics such as a 108 op amp with improved CMRR and a high differential input voltage limit achieved through the use of a bias cancellation and PNP input circuits with collector-to-emitter clamping. The output characteristics are like those of a 741 op amp with improved slew rate and drive capability, yet have low supply quiescent current. PIN CONFIGURATIONS N Package OUTPUT 1 -INPUT 1 +INPUT 1 V1 2 3 4 TOP VIEW 8 7 6 5 V+ OUTPUT 2 -INPUT 2 +INPUT 2 APPLICATIONS • AC amplifiers • RC active filters • Transducer amplifiers • DC gain.

NE5514 : The NE/SE5514 family of quad operational amplifiers sets new standards in bipolar quad amplifier performance. The amplifiers feature low input bias current and low offset voltages. Pinout is identical to LM324/LM348 which facilitates direct product substitution for improved system performance in dual supply applications. Output characteristics are similar to a µA741 with improved slew and drive capability. PIN CONFIGURATIONS N Packages OUTPUT 1 –INPUT 1 +INPUT 1 V+ +INPUT 2 1 2 3 4 5 6 7 3 4 1 2 14 13 12 11 10 9 8 OUTPUT 1 –INPUT 1 +INPUT 1 V– +INPUT 2 –INPUT 2 OUTPUT 2 FEATURES –INPUT 2 OUTPUT 2 • Low input bias current: ±3nA • Low input offset current: ±3nA • Low input offset volta.

NE5514D : The NE/SE5514 family of quad operational amplifiers sets new standards in bipolar quad amplifier performance. The amplifiers feature low input bias current and low offset voltages. Pinout is identical to LM324/LM348 which facilitates direct product substitution for improved system performance in dual supply applications. Output characteristics are similar to a µA741 with improved slew and drive capability. PIN CONFIGURATIONS N Packages OUTPUT 1 –INPUT 1 +INPUT 1 V+ +INPUT 2 1 2 3 4 5 6 7 3 4 1 2 14 13 12 11 10 9 8 OUTPUT 1 –INPUT 1 +INPUT 1 V– +INPUT 2 –INPUT 2 OUTPUT 2 FEATURES –INPUT 2 OUTPUT 2 • Low input bias current: ±3nA • Low input offset current: ±3nA • Low input offset volta.

NE5514N : The NE/SE5514 family of quad operational amplifiers sets new standards in bipolar quad amplifier performance. The amplifiers feature low input bias current and low offset voltages. Pinout is identical to LM324/LM348 which facilitates direct product substitution for improved system performance in dual supply applications. Output characteristics are similar to a µA741 with improved slew and drive capability. PIN CONFIGURATIONS N Packages OUTPUT 1 –INPUT 1 +INPUT 1 V+ +INPUT 2 1 2 3 4 5 6 7 3 4 1 2 14 13 12 11 10 9 8 OUTPUT 1 –INPUT 1 +INPUT 1 V– +INPUT 2 –INPUT 2 OUTPUT 2 FEATURES –INPUT 2 OUTPUT 2 • Low input bias current: ±3nA • Low input offset current: ±3nA • Low input offset volta.

NE5517 : The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit performance is enhanced through the use of linearizing diodes at the inputs which enable a 10 dB signal-to-noise improvement referenced to 0.5% THD. The AU5517/NE5517 is suited for a wide variety of industrial and consumer applications. Constant impedance buffers on the chip allow general use of the AU5517/NE5517. These buffers are made of Darlington transistors and a biasing network that virtually eliminate the .

NE5517 : Pin No. Symbol 1 IABCa 2 Da 3 +INa 4 −INa 5 VOa 6 V− 7 INBUFFERa 8 VOBUFFERa 9 VOBUFFERb 10 INBUFFERb 11 V+ 12 VOb 13 −INb 14 +INb 15 Db 16 IABCb NE5517 Amplifier Bias Input A Diode Bias A Non-inverted Input A Inverted Input A Output A Negative Supply Buffer Input A Buffer Output A Buffer Output B Buffer Input B Positive Supply Output B Inverted Input B Non-inverted Input B Diode Bias B Amplifier Bias Input B Description V+ 11 D4 Q6 Q7 D6 Q10 Q11 Q14 Q12 7,10 Q13 8,9 2,15 D2 −INPUT 4,13 Q4 Q5 D3 +INPUT 3,14 VOUTPUT 5,12 1,16 AMP BIAS Q2 INPUT Q1 Q9 Q8 Q15 Q16 Q3 D7 R1 D8 D1 D5 V− 6 Figure 1. Circuit Schematic www.onsemi.com 2 B AM.

NE5517A : The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit performance is enhanced through the use of linearizing diodes at the inputs which enable a 10 dB signal-to-noise improvement referenced to 0.5% THD. The AU5517/NE5517 is suited for a wide variety of industrial and consumer applications. Constant impedance buffers on the chip allow general use of the AU5517/NE5517. These buffers are made of Darlington transistors and a biasing network that virtually eliminate the .

NE5517A : Pin No. Symbol 1 IABCa 2 Da 3 +INa 4 −INa 5 VOa 6 V− 7 INBUFFERa 8 VOBUFFERa 9 VOBUFFERb 10 INBUFFERb 11 V+ 12 VOb 13 −INb 14 +INb 15 Db 16 IABCb NE5517 Amplifier Bias Input A Diode Bias A Non-inverted Input A Inverted Input A Output A Negative Supply Buffer Input A Buffer Output A Buffer Output B Buffer Input B Positive Supply Output B Inverted Input B Non-inverted Input B Diode Bias B Amplifier Bias Input B Description V+ 11 D4 Q6 Q7 D6 Q10 Q11 Q14 Q12 7,10 Q13 8,9 2,15 D2 −INPUT 4,13 Q4 Q5 D3 +INPUT 3,14 VOUTPUT 5,12 1,16 AMP BIAS Q2 INPUT Q1 Q9 Q8 Q15 Q16 Q3 D7 R1 D8 D1 D5 V− 6 Figure 1. Circuit Schematic www.onsemi.com 2 B AM.

NE5520 : www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet 4 U .com .

NE5520279A : NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power ampliÞer for mobile and Þxed wireless applications. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package. APPLICATIONS • DIGITAL CELLULAR PHONES: 3.2 V DCS1800 Handsets • 0.7-2.5 GHz FIXED WIRELESS ACCESS • W-LAN • SHORT RANGE WIRELESS • RETAIL BUSINESS RADIO • SPECIAL MOBILE RADIO ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE Functional Characteristics SYMBOLS POUT GL CHARACTERISTICS Output Power Linear Gain Power Added EfÞciency Drain Current Gate-to-Source Leakage Current Saturated Drain C.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)