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NE500199

NEC Electronics
Part Number NE500199
Manufacturer NEC Electronics
Description (NE500100 / NE500199) C-Band Medium Power GaAs MESFET
Published Dec 23, 2005
Detailed Description C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 FEATURES • HIGH OUTPUT POWER: 1 W • HIGH LINEAR GAIN: 9.0 dB • HIGH ...
Datasheet PDF File NE500199 PDF File

NE500199
NE500199

Overview
C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 FEATURES • HIGH OUTPUT POWER: 1 W • HIGH LINEAR GAIN: 9.
0 dB • HIGH EFFICIENCY: 37% (PAE) • INDUSTRY STANDARD PACKAGING • THIS DEVICE IS ALSO AVAILABLE AS A TWO-CELL CHIP: NE8500100 ABSOLUTE MAXIMUM RATINGS1 (TC = 25 °C unless otherwise noted) SYMBOLS VDS VGD VGS IDS IGS PT TCH TSTG PARAMETERS Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature UNITS V V V RATINGS 15 -18 -12 IDSS 6.
0 6.
0 175 -65 to +175 Total Power Dissipation DESCRIPTION The NE8500199 is a medium power GaAs MESFET designed for up to a 1W output stage or as a driver for higher power devices.
The device has no internal matching and can be used at frequencies from UHF to 8.
5 GHZ.
The device is available in the “99” package or in chip form.
The chip is a twocell die; bonding both cells delivers the rated performance.
The NE850 Series Transistors are manufactured to NEC's stringent quality assurance standards to ensure highest reliability and consistent superior performance.
Note: 1.
Operation in excess of any one of these parameters may result in permanent damage.
ELECTRICAL CHARACTERISTICS (TC PACKAGE OUTLINE SYMBOLS POUT GL Functional Characteristics Power Out at Fixed Input Power Linear Gain ηADD IDS Collector Efficiency Drain Source Current Saturated Drain Current Pinch-off Voltage Transconductance Thermal Resistance w w CHARACTERISTICS .
D w PART NUMBER t a S a e h VDS TCH RG RECOMMENDED OPERATING LIMITS SYMBOLS PARAMETERS UNITS MIN V °C dB KΩ 1 9 TYP MAX 10 130 3.
0 4 Drain to Source Voltage Channel Temperature Gain Compression Gate Resistance t e U 4 .
c m o A mA W °C °C GCOMP = 25°C) NE8500199 NE8500100 00 (Chip), 99 UNITS dBm dB % mA mA V mS °C/W 330 -3.
0 300 60 MIN 28.
5 TYP 29.
5 9.
0 37 200 825 -1.
0 MAX TEST CONDITIONS PIN = 21.
0 dBm f = 7.
2 GHz VDS = 10 V; IDSQ = 200 mA RG = 1KΩ VDS = 2.
5 V; VGS = 0 V VDS = 2.
5 V; IDS = 4 mA VDS = 2.
5 V; I...


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