PRELIMINARY DATA SHEET
NPN SILICON
TRANSISTOR NE856M13
FEATURES
• NEW MINIATURE M13 PACKAGE: – Small
transistor outline – 1.
0 X 0.
5 X 0.
5 mm – Low profile / 0.
50 mm package height – Flat lead style for better RF performance LOW NOISE FIGURE: NF = 1.
4 dB at 1 GHz HIGH COLLECTOR CURRENT: IC MAX = 100 mA
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M13
+0.
1 0.
5 –0.
05 +0.
1 0.
15 –0.
05 1 0.
35
0.
3
2
• •
XX
1
+0.
1 1.
0 –0.
05
3
0.
7 0.
35 2 +0.
1 0.
15 –0.
05 0.
2
3
+0.
1 0.
2 –0.
05
DESCRIPTION
The NE856M13
transistor is designed for low cost amplifier and oscillator applications.
Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity.
NEC...