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NE856M02

CEL
Part Number NE856M02
Manufacturer CEL
Description NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
Published Jul 28, 2007
Detailed Description www.DataSheet4U.com NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • • • HIGH COLL...
Datasheet PDF File NE856M02 PDF File

NE856M02
NE856M02

Overview
www.
DataSheet4U.
com NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • • • HIGH COLLECTOR CURRENT: 100 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE) HIGH OUTPUT POWER AT 1 dB COMPRESSION: 22 dBm TYP at 1 GHz HIGH IP3: 32 dBm TYP at 1 GHz NE856M02 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M02 BOTTOM VIEW 4.
5±0.
1 1.
6±0.
2 1.
5±0.
1 NEC's NE856M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion.
This device offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metallization system and direct nitr...


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