PRELIMINARY DATA SHEET
SILICON POWER
TRANSISTOR
NEL2012F03-24
NPN SILICON EPITAXIAL
TRANSISTOR L BAND POWER AMPLIFIER
DESCRIPTION
The NEL2012F03-24 of
NPN epitaxial microwave power
transistors is designed for 1.
8 GHz-2.
0 GHz PCN/PCS/ PHS base station applications.
It is corporate emitter ballast resistors, gold metalizations and offers a high degree of reliability.
FEATURES
High Linear Power and Gain Low Internal Modulation Distortion High Reliability Gold Metalization Emitter Ballasting 24 V Operation
APPLICATION
Digital Cellular : PCN/PCS etc.
Digital Cordless : PHS etc.
ORDERING INFORMATION
Part Number NEL2012F03-24 Package Outline F03
PACKAGE DIMENSIONS
(Unit: mm)
2.
8 ± 0.
2
6.
35 ±...