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NEL2012F03-24

NEC
Part Number NEL2012F03-24
Manufacturer NEC
Description NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER
Published May 7, 2005
Detailed Description PRELIMINARY DATA SHEET SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER ...
Datasheet PDF File NEL2012F03-24 PDF File

NEL2012F03-24
NEL2012F03-24

Overview
PRELIMINARY DATA SHEET SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.
8 GHz-2.
0 GHz PCN/PCS/ PHS base station applications.
It is corporate emitter ballast resistors, gold metalizations and offers a high degree of reliability.
FEATURES High Linear Power and Gain Low Internal Modulation Distortion High Reliability Gold Metalization Emitter Ballasting 24 V Operation APPLICATION Digital Cellular : PCN/PCS etc.
Digital Cordless : PHS etc.
ORDERING INFORMATION Part Number NEL2012F03-24 Package Outline F03 PACKAGE DIMENSIONS (Unit: mm) 2.
8 ± 0.
2 6.
35 ±...


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