MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBFJ309LT1/D
JFET VHF/UHF Amplifier
Transistor
N–Channel
3 GATE
MMBFJ309LT1 MMBFJ310LT1
2 SOURCE
1 DRAIN
3 1
MAXIMUM RATINGS
Rating Drain–Source Voltage Gate–Source Voltage Gate Current Symbol VDS VGS IG Value 25 25 10 Unit Vdc Vdc mAdc
2
CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.
8 RqJA TJ, Tstg 556 – 55 to +150 Unit mW mW/°C °C/W °C
DEVICE MARKING
MMBFJ309LT1 = 6U; MMBFJ310LT1 = 6T
ELECTRICAL CHARACTERISTICS (TA = 25...