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MMBFJ309LT1

Motorola
Part Number MMBFJ309LT1
Manufacturer Motorola
Description JFET VHF/UHF Amplifier Transistor
Published May 9, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBFJ309LT1/D JFET VHF/UHF Amplifier Transistor N–Chann...
Datasheet PDF File MMBFJ309LT1 PDF File

MMBFJ309LT1
MMBFJ309LT1

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBFJ309LT1/D JFET VHF/UHF Amplifier Transistor N–Channel 3 GATE MMBFJ309LT1 MMBFJ310LT1 2 SOURCE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Gate Current Symbol VDS VGS IG Value 25 25 10 Unit Vdc Vdc mAdc 2 CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.
8 RqJA TJ, Tstg 556 – 55 to +150 Unit mW mW/°C °C/W °C DEVICE MARKING MMBFJ309LT1 = 6U; MMBFJ310LT1 = 6T ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate–Source Breakdown Voltage (IG = –1.
0 µAdc, VDS = 0) Gate Reverse Current (VGS = –15 Vdc) Gate Reverse Current (VGS = –15 Vdc, TA = 125°C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.
0 nAdc) MMBFJ309 MMBFJ...


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