MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBR4957LT1/D
The RF Line
PNP Silicon High-Frequency
Transistor
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designed for high–gain, low–noise amplifier oscillator and mixer applications.
Specifically packaged for thick and thin–film circuits using surface mount components.
• High Gain — Gpe = 17 dB Typ @ f = 450 MHz • Low Noise — NF = 3.
0 dB Typ @ f = 450 MHz • Available in tape and reel packaging options by adding suffix: T1 suffix = 3,000 units per reel T3 suffix = 10,000 units per reel MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Maximum Junction Temperature Power Dissipation, Tcase = ...