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MMBR4957LT1

Motorola
Part Number MMBR4957LT1
Manufacturer Motorola
Description PNP Silicon High-Frequency Transistor
Published May 9, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR4957LT1/D The RF Line PNP Silicon High-Frequency Tra...
Datasheet PDF File MMBR4957LT1 PDF File

MMBR4957LT1
MMBR4957LT1

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR4957LT1/D The RF Line PNP Silicon High-Frequency Transistor .
.
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designed for high–gain, low–noise amplifier oscillator and mixer applications.
Specifically packaged for thick and thin–film circuits using surface mount components.
• High Gain — Gpe = 17 dB Typ @ f = 450 MHz • Low Noise — NF = 3.
0 dB Typ @ f = 450 MHz • Available in tape and reel packaging options by adding suffix: T1 suffix = 3,000 units per reel T3 suffix = 10,000 units per reel MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Maximum Junction Temperature Power Dissipation, Tcase = 75°C* Derate linearly above Tcase = 75°C @ Symbol VCEO VCBO VEBO IC TJmax PD(max) Value – 30 – 30 – 3.
0 – 30 150 0.
278 3.
70 Unit Vdc Vdc Vdc mAdc °C W mW/°C IC = – 30 mA HIGH–FREQUENCY TRANSISTOR PNP SILICON MMBR4957LT1, T3 THERMAL CHARACTERISTICS Characteristic Storage Temperature Thermal Resista...


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