MMBT5401

MMBT5400 : www.DataSheet4U.com MMBT5400 / MMBT5401 MMBT5400 / MMBT5401 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 1.3±0.1 1.1 PNP 250 mW SOT-23 (TO-236) 0.01 g Version 2006-05-16 Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 1.9 2 Dimensions - Maße [mm] 1=B 2=E 3=C Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-S.

MMBT5401 : Production specification PNP General Purpose Transistor FEATURES  Epitaxial planar die construction.  Complementary NPN type available (MMBT5551).  Also available in lead free version. Pb Lead-free MMBT5401 APPLICATIONS  Ideal for medium power amplification and switching ORDERING INFORMATION Type No. Marking MMBT5401 2L SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO collector-base voltage -160 VCEO collector-emitter voltage -150 VEBO emitter-base voltage -5 IC collector current (DC) -0.6 PD Total device dissipation 0.35 RθJC Thermal resistance,junction to ambient 357 Tj ,Tstg junction and storage t.

MMBT5401 : MMBT5401 150V PNP HIGH-VOLTAGE TRANSISTOR IN SOT23 Features  Epitaxial Planar Die Construction  Complementary NPN Type - MMBT5551  Ideal for Low Power Amplification and Switching  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. "Green" Device (Note 3)  This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/  An automotive-compliant part is available under separate datasheet (MMBT5401Q) Mechanical Data  Package: SOT23  Package Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-02.

MMBT5401 : UNISONIC TECHNOLOGIES CO., MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc(max)=350mW *High current gain 2 1 MARKING 3 2L SOT-23 *Pb-free plating product number:MMBT5401L PIN CONFIGURATION www.DataSheet4U.com PIN NO. PIN NAME 1 Emitter 2 Base 3 Collector ORDERING INFORMATION Order Number Normal Lead free MMBT5401-AE3-R MMBT5401L-AE3-R Package SOT-23 Packing Tape Reel www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., 1 QW-R206-011.C MMBT5401 PARAMETER Collector -Base Voltage Collector -Emitter Voltage Emitter -Base Voltage DC Collector Current Power Dissipation Op.

MMBT5401 : MMBT5401 — PNP Epitaxial Silicon Transistor MMBT5401 PNP Epitaxial Silicon Transistor Features • PNP General-Purpose Amplifier • This device is designed as a general-purpose amplifier and switch for applications requiring high voltage. C E B SOT-23 Ordering Information Part Number MMBT5401 MMBT5401-D87Z Marking 2L 2L Package SOT-23 3L SOT-23 3L Packing Method Tape and Reel, 3000 pcs, 7 inch Reel Tape and Reel, 10000 pcs, 13 inch Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In .

MMBT5401 : www.DataSheet4U.com MMBT5400 / MMBT5401 MMBT5400 / MMBT5401 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 1.3±0.1 1.1 PNP 250 mW SOT-23 (TO-236) 0.01 g Version 2006-05-16 Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 1.9 2 Dimensions - Maße [mm] 1=B 2=E 3=C Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-S.

MMBT5401 : PNP General Purpose Transistor MMBT5401 FEATURES • Ideal for Medium Power Amplification and Switching • Complementary PNP Type available(MMBT5551) MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI) • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC TJ TSTG Electrical Characteristics @ TA = 25℃ unless otherwise specified Characteristic Test Condition Symbol Collector-ba.

MMBT5401 : MMBT5401 Marking Code 2L -VCBO Collector-Base Voltage 160 -VCEO Collector-Emitter Voltage 150 -VEBO Emitter-Base Voltage 5 -IC Collector Current 500 Ptot Power Dissipation up to TA=25°C 250 RθJA Thermal Resistance, Junction to Ambient 500 TJ Junction Temperature 150 TSTG Storage Temperature Range -55 to +150 Unit V V V mA mW K/W °C °C TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. A/AH 2009-01-12 Page 1 of 3 SMD High Voltage Transistor (PNP) Electrical Characteristics (T.

MMBT5401 : MMBT5401 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * Power dissipation PCM: 0.3 W(Tamb=25OC) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 160 V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS (@ TA = 25OC unless otherwise noted) RATI.

MMBT5401 : MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Halogen free available upon request by adding suffix "-HF" • Collector Current: ICM=0.6A • Collector-Base Voltage: V(BR)CBO=160V • Operating And Storage Temperatures –55OC to 150OC • Capable of 0.3Watts of Power Dissipation • Marking: 2L • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units OFF CHARACTERISTICS V (BR).

MMBT5401 : Elektronische Bauelemente MMBT5401 PNP Silicon General PurposeTransistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Ideal for medium power amplification and switching MARKING 2L ABSOLUTE MAXIMUM RATINGS Parameter Collector to Emitter Voltage Collector to Base Voltage Emitter to Base Voltage Collector Current - Continuous Symbol Ratings VCEO VCBO VEBO IC -150 -160 -5.0 -500 Unit V V V mA SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.80 2.25 1.20 3.00 2.55 1.40 0.90 1.15 1.80 2.00 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.55 REF. 0.08 0.15 0.5 REF. 0.95 TYP. THERMAL CHARACTERI.

MMBT5401 : Plastic-Encapsulate Transistors FEATURES Complementary to MMBT5551 Ideal for medium power amplification and switching MMBT5401 (PNP) MARKING: 2L MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO -160 VCEO -150 VEBO -5 IC -0.6 PC 0.3 TJ 150 Tstg -55 to +150 Unit V V V A W 1. BASE 2. EMITTER 3. COLLECTO SOT-23 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Min Collector-base breakdown voltage VCBO IC= -100μA, IE=0 -160 Collector.

MMBT5401 : SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package.  / Features , MMBT5551 。 High voltage, complementary Pair with MMBT5551.  / Applications 。 General purpose high voltage amplifier.  / Equivalent Circuit / Pinning 3 2 1 PIN 1：Emitter PIN 2：Base PIN 3：Collector / hFE Classifications & Marking hFE Classifications Symbol hFE Range A 50～150 B 100～300 C 200～400 Marking H2LA H2LB H2LC http://www.fsbrec.com 1/6 MMBT5401 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temper.

MMBT5401 : High Voltage PNP Transistors MMBT5401 COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 SOT-23 WEITRON http://www.weitron.com.tw MMBT5401 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC=-1.0mAdc, VCE=-5.0Vdc) (IC=-10mAdc, VCE=-5.0Vdc) (IC=-50mAdc, VCE=-5.0Vdc) Collector-Emitter Saturation Voltage (IC=-10mAdc, IB=-1.0mAdc) (IC=-50mAdc, IB=-5.0mAdc) Base-Emitter Saturation Voltage (IC=-10mAdc, IB=-1.0mAdc) (IC=-50mAdc, IB=-5.0mAdc) SMALL-SIGNAL CHARACTERISTICS Collector-Gain-Bandwidth Product ( IC -10mVdc,VCE=-10Vdc, f=100MHz) Output Capacitance ( VCB -10Vdc, IE=0, f=1.0MHz) Small Signal Current Ga.

MMBT5401 : MMBT5401 HIGH VOLTAGE TRANSISTOR PNP Silicon FEATURES • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case : SOT-23 plastic case. • Terminals : Solderable per MIL-STD-750,Method 2026 • Standard packaging : 8mm tape • Weight : approximately 0.008gram • Marking : M5A MAXIMUM RATINGS Collector-Emitter Voltage RATING Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous SYMBOL VCEO VCBO VEBO IC VALUE -150 -160 -5.0 -500 UNITS Vdc Vdc Vdc mAdc Maximum ratings are those values beyound which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneo.

MMBT5401 : SSMMDD TTyyppee PNP Transistors MMBT5401 (KMBT5401) Transistors Features High Voltage Transistors Pb-Free Packages are Available +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.21.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-continuous Collector Power Dissipation Junction and storage temperature Symbol VCBO VCEO VEBO IC Pc TJ, Tstg Rating -160 -150 -5 -0.6 300 -55 to +150 Unit V V V A mW 0-0.1 +0.10.68 -0.1 1. Base 2. Emitter 3. Collector Electrical Characteristics Ta = 25 Parameter Symbol Testcon.