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MMBT5401

Part Number	MMBT5401
Manufacturer	GME
Description	NPN General Purpose Transistor
Published	Apr 19, 2018
Detailed Description	Production specification PNP General Purpose Transistor FEATURES  Epitaxial planar die construction.  Complementary ...
Datasheet	MMBT5401 PDF File

Overview

Production specification PNP General Purpose Transistor FEATURES  Epitaxial planar die construction.
 Complementary NPN type available (MMBT5551).
 Also available in lead free version.
Pb Lead-free MMBT5401 APPLICATIONS  Ideal for medium power amplification and switching ORDERING INFORMATION Type No.
Marking MMBT5401 2L SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO collector-base voltage -160 VCEO collector-emitter voltage -150 VEBO emitter-base voltage -5 IC collector current (DC) -0.
6 PD Total device dissipation 0.
35 RθJC Thermal resistance,junction to ambient 357 Tj ,Tstg junction and storage temperature -55 to +150 UNIT V V V A W °C/W °C C075 Rev.
A www.
gmesemi.
com 1 Production specification PNP General Purpose Transistor MMBT5401 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Symbol Parameter Test conditions MIN.
MAX.
UNIT V(BR)CBO Collector-ba...

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