Phototransistors PNZ109CL Silicon NPN Phototransistor Unit : mm For optical control systems Features High sensitivity : ICE(L) = 2 mA (min.
) (at L = 500 lx) Wide directional sensitivity for easy use Fast response : tr = 5 µs (typ.
) Signal mixing capability using base pin 1.
0± 0.
15 3.
0±0.
3 12.
7 min.
2.
0±0.
1 0.
2±0.
05 3-ø0.
45±0.
05 2.
54±0.
25 0 0± 1.
5 .
1 Small size (low in height) package ø5.
75 max.
ø4.
2±0.
2 45± Resin to cutoff visible light is used 3˚ 3 1 2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature...

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