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PNZ109L

Panasonic Semiconductor
Part Number PNZ109L
Manufacturer Panasonic Semiconductor
Description Silicon NPN Phototransistor
Published May 9, 2005
Detailed Description Phototransistors PNZ109L Silicon NPN Phototransistor ø4.6±0.15 Unit : mm Glass lens For optical control systems Featu...
Datasheet PDF File PNZ109L PDF File

PNZ109L
PNZ109L

Overview
Phototransistors PNZ109L Silicon NPN Phototransistor ø4.
6±0.
15 Unit : mm Glass lens For optical control systems Features High sensitivity : ICE(L) = 3.
5 mA (min.
) (at L = 100 lx) 12.
7 min.
6.
3±0.
3 Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting devices : λp = 900 nm (typ.
) Fast response : tr = 5 µs (typ.
) Long lifetime, high reliability 3-ø0.
45±0.
05 2.
54±0.
25 0 0± 1.
.
2 .
1 5 3˚ 45± 1.
0± 0 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operati...


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