Photo
transistors
PNZ121S
Silicon
NPN Photo
transistor
Unit : mm
For optical control systems Features
Stable operations in high illuminance region Low dark current
12.
5 min.
4.
1±0.
3 2.
0±0.
2
ø3.
0±0.
2
Fast response : tr = 1 µs (typ.
) Small size (ø 3) ceramic package
ø0.
3±0.
05 ø0.
45±0.
05
0.
9±0.
15
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 10 50 –25 to +85 –30 to +100 Unit V V mA mW ˚C ˚C
2 1 1: Emitter 2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Dark current Collect...