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PNZ123S

Panasonic Semiconductor
Part Number PNZ123S
Manufacturer Panasonic Semiconductor
Description Silicon NPN Phototransistor
Published May 9, 2005
Detailed Description Phototransistors PNZ123S Silicon NPN Phototransistor Unit : mm For optical control systems 4.1±0.3 2.0±0.2 12.5 min. ...
Datasheet PDF File PNZ123S PDF File

PNZ123S
PNZ123S


Overview
Phototransistors PNZ123S Silicon NPN Phototransistor Unit : mm For optical control systems 4.
1±0.
3 2.
0±0.
2 12.
5 min.
ø3.
0±0.
2 Can be combined with LN62S to form an photo interrupter Features High sensitivity Low dark current Fast response : tr = 3.
5 µs (typ.
) Small size (ø 3) ceramic package ø0.
3±0.
05 ø0.
45±0.
05 0.
9±0.
15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 10 50 –25 to +85 –30 to +100 Unit V V mA mW ˚C ˚C 2 1 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25˚C...



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