Part Number
|
MIP2E3DMY |
Manufacturer
|
Panasonic |
Description
|
Silicon MOSFET |
Published
|
May 11, 2005 |
Detailed Description
|
(IPD)
MIP2E3DMY
MOS
I
2.8±0.2 1.5±0.2
Unit : mm
10.5±0.5 9.5±0.2 8.0±0.2
6.7±0.3
• •
4.5±0.2 1.4±0.1
I
15.4±0.3
φ ...
|
Datasheet
|
MIP2E3DMY
|
Overview
(IPD)
MIP2E3DMY
MOS
I
2.
8±0.
2 1.
5±0.
2
Unit : mm
10.
5±0.
5 9.
5±0.
2 8.
0±0.
2
6.
7±0.
3
• •
4.
5±0.
2 1.
4±0.
1
I
15.
4±0.
3
φ 3.
7±0.
2
I
Ta = 25°C ± 3°C
13.
5±0.
5 4.
2±0.
3 Solder Dip
1.
4±0.
1
(9.
3)
2.
5±0.
2 0.
6 +0.
1 –0.
2
0.
8±0.
1
VD VC ID IDP IC Tch Tstg
700 10 1.
15 1.
60 0.
1 150 −55 ∼ +150
V V A A A °C °C
2.
54±0.
3 5.
08±0.
5
1 2 3
1 : Control 2 : Source 3 : Drain TO-220-A1 Package
: MIP2E3DMY
I
Control 1 3
Drain
S R
Q Q MOSFET
Max Duty Clock Sawtooth
S V-I R
Q Q
2
Source
2.
8±0.
2
•
: 2001
8
SLB00045AJD
1
MIP2E3DMY
I TC = 25°C ± 2°C
fOSC MAXDC PWM
* *
VC = VC(CNT) − 0.
2 V VC = VC(CNT) − 0.
2 V
90 66
100 69 11 40
110 72
kHz % dB mA/µs
GPWM m VC VC(ON) VC = VC(CNT) − 0.
2 V
...
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