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MIP2E3DMY

Panasonic
Part Number MIP2E3DMY
Manufacturer Panasonic
Description Silicon MOSFET
Published May 11, 2005
Detailed Description (IPD) MIP2E3DMY MOS I 2.8±0.2 1.5±0.2 Unit : mm 10.5±0.5 9.5±0.2 8.0±0.2 6.7±0.3 • • 4.5±0.2 1.4±0.1 I 15.4±0.3 φ ...
Datasheet PDF File MIP2E3DMY PDF File

MIP2E3DMY
MIP2E3DMY

Overview
(IPD) MIP2E3DMY MOS I 2.
8±0.
2 1.
5±0.
2 Unit : mm 10.
5±0.
5 9.
5±0.
2 8.
0±0.
2 6.
7±0.
3 • • 4.
5±0.
2 1.
4±0.
1 I 15.
4±0.
3 φ 3.
7±0.
2 I Ta = 25°C ± 3°C 13.
5±0.
5 4.
2±0.
3 Solder Dip 1.
4±0.
1 (9.
3) 2.
5±0.
2 0.
6 +0.
1 –0.
2 0.
8±0.
1 VD VC ID IDP IC Tch Tstg 700 10 1.
15 1.
60 0.
1 150 −55 ∼ +150 V V A A A °C °C 2.
54±0.
3 5.
08±0.
5 1 2 3 1 : Control 2 : Source 3 : Drain TO-220-A1 Package : MIP2E3DMY I Control 1 3 Drain S R Q Q MOSFET Max Duty Clock Sawtooth S V-I R Q Q 2 Source 2.
8±0.
2 • : 2001 8 SLB00045AJD 1 MIP2E3DMY I TC = 25°C ± 2°C fOSC MAXDC PWM * * VC = VC(CNT) − 0.
2 V VC = VC(CNT) − 0.
2 V 90 66 100 69 11 40 110 72 kHz % dB mA/µs GPWM m VC < VC(ON) VC = VC(CNT) − 0.
2 V ...


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