NTE583 Silicon Rectifier Diode
Schottky, RF Switch
Description: The NTE583 is a metal to silicon junction diode featuring high breakdown, low turn–on voltage and ultrafast switching.
This device is primarly intented for high level UHF/VHF detection and pulse application with broad dynamic range.
Absolute Maximum Ratings: (TA = +25°C, Limiting Values) Repetitive Peak Reverse Voltage, VRRM .
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70V Forward Continuous Current (Figure 1), IF .
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15mA Surge Non–Repetitive Forward Current (tp ≤ 1s, Figure 1), IFSM .
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