January 1996
NDP603AL / NDB603AL N-Channel Logic Level Enhancement Mode Field Effect
Transistor
General Description
These N-Channel logic level enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
25A, 30V.
RDS(ON) = 0.
022Ω @ VGS=10V.
Critical DC electrical parameters specified at elevated temperature.
Rugge...