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NDB6030L

Fairchild
Part Number NDB6030L
Manufacturer Fairchild
Description N-Channel MOSFET
Published May 12, 2005
Detailed Description June 1996 NDP6030L / NDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These ...
Datasheet PDF File NDB6030L PDF File

NDB6030L
NDB6030L

Overview
June 1996 NDP6030L / NDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features 52 A, 30 V.
RDS(ON) = 0.
0135 Ω @ VGS=10 V RDS(ON) = 0.
020 Ω @ VGS=4.
5 V.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
High density cell design for extremely low RDS(ON).
175°C maximum junction temperature rating.
_______________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage T C = 25°C unless otherwise noted NDP6030L 30 ± 16 52 156 75 0.
5 -65 to 175 275 NDB6030L Units V V A Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed PD Total Power Dissipation @ TC = 25°C Derate above 25°C W W/°C °C °C TJ,TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient THERMAL CHARACTERISTICS RθJC RθJA 2 62.
5 °C/W °C/W © 1998 Fairchild Semiconductor Corporation NDP6030L Rev.
E Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 1) WDSS IAR BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Single Pulse Drain-Source Avalanche Energy VDD = 15 V, ID = 52 A Maximum Drain-Source Avalanche Current 100 52 mJ A OFF CHARACTERISTICS Dr...


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