DATA SHEET
HETERO JUNCTION FIELD EFFECT
TRANSISTOR
NE3210S01
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
DESCRIPTION
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.
Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain NF = 0.
35 dB TYP.
Ga = 13.
5 dB TYP.
at f = 12 GHz • Gate Length: Lg ≤ 0.
20 µm • Gate Width : Wg = 160 µm
ORDERING INFORMATION (PLAN)
Part Number NE3210S01-T1 NE3210S01-T1B Supplying Form Tape & reel 1 000 pcs.
/reel Tape & reel 4 000 pcs.
/reel Marking K
Remark For sample order, please contact your lo...