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NE3210S01

CEL
Part Number NE3210S01
Manufacturer CEL
Description HETERO JUNCTION FIELD EFFECT TRANSISTOR
Published Jun 28, 2019
Detailed Description Drop-InDISReplacement:CONTICE3512K2NUED DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER...
Datasheet PDF File NE3210S01 PDF File

NE3210S01
NE3210S01

Overview
Drop-InDISReplacement:CONTICE3512K2NUED DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.
Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.
FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.
35 dB TYP.
Ga = 13.
5 dB TYP.
at f = 12 GHz • Gate Length: Lg ≤ 0.
20 µm • Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number Supplying Form NE3210S01-T1 Tape & reel 1 000 pcs.
/reel NE3210S01-T1B Tape & reel 4 000 pcs.
/reel Marking K R...


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