DATA SHEET
HETERO JUNCTION FIELD EFFECT
TRANSISTOR
NE429M01
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.
Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
FEATURES
• • • Super low noise figure & High associated gain NF = 0.
9 dB TYP.
, Ga = 10 dB TYP.
@ f = 12 GHz 6-pin super minimold package Gate width: Wg = 200µm
ORDERING INFORMATION
Part Number NE429M01-T1 Package 6-pin super minimold Marking V72 Supplying Form Embossed tape 8 mm wide.
1, 2, 3 pins face to perforation side of the tape Qty 3 kpcs/r...