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NE429M01

NEC
Part Number NE429M01
Manufacturer NEC
Description C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Published May 12, 2005
Detailed Description DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET D...
Datasheet PDF File NE429M01 PDF File

NE429M01
NE429M01

Overview
DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.
Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
FEATURES • • • Super low noise figure & High associated gain NF = 0.
9 dB TYP.
, Ga = 10 dB TYP.
@ f = 12 GHz 6-pin super minimold package Gate width: Wg = 200µm ORDERING INFORMATION Part Number NE429M01-T1 Package 6-pin super minimold Marking V72 Supplying Form Embossed tape 8 mm wide.
1, 2, 3 pins face to perforation side of the tape Qty 3 kpcs/reel ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID IG Ptot Tch Tstg Ratings 4.
0 −3.
0 IDSS 100 125 125 −65 to +125 Unit V V mA µA mW °C °C T...


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