P2N2222A
Amplifier
Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Value
Collector −Emitter Voltage
VCEO
40
Collector −Base Voltage
VCBO
75
Emitter−Base Voltage
VEBO
6.
0
Collector Current − Continuous
IC 600
Total Device Dissipation @ TA = 25°C Derate above 25°C
PD 625 5.
0
Unit Vdc Vdc Vdc mAdc mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD 1.
5 W 12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
−55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200 °C/W
Thermal Resistance, Ju...