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P2N2222A

ON Semiconductor
Part Number P2N2222A
Manufacturer ON Semiconductor
Description NPN Amplifier Transistor
Published May 13, 2005
Detailed Description P2N2222A Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS (TA = 25°C unless othe...
Datasheet PDF File P2N2222A PDF File

P2N2222A
P2N2222A

Overview
P2N2222A Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Collector −Emitter Voltage VCEO 40 Collector −Base Voltage VCBO 75 Emitter−Base Voltage VEBO 6.
0 Collector Current − Continuous IC 600 Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.
0 Unit Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.
5 W 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.
3 °C/W Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Co...


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