Philips Semiconductors
Objective specification
TrenchMOS™
transistor
PSMN009-100W
FEATURES
• ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA VDSS = 100 V ID = 100 A
g
RDS(ON) ≤ 9 mΩ
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power
transistor in a plastic envelope using ’trench’ technology.
The device has very low on-state resistance.
It is intended for use in dc to dc converters and general purpose switching applications.
The PSMN009-100W is supplied in the SOT429 (TO247) conventional leaded package.
PINNING
PIN 1 2 3 tab gate drain source drain DESCRIPTIO...