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PSMN009-100P

nexperia
Part Number PSMN009-100P
Manufacturer nexperia
Description N-channel MOSFET
Published Jul 28, 2019
Detailed Description PSMN009-100P N-channel TrenchMOS SiliconMAX standard level FET Rev. 4 — 27 December 2011 Product data sheet 1. Produ...
Datasheet PDF File PSMN009-100P PDF File

PSMN009-100P
PSMN009-100P

Overview
PSMN009-100P N-channel TrenchMOS SiliconMAX standard level FET Rev.
4 — 27 December 2011 Product data sheet 1.
Product profile 1.
1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.
2 Features and benefits  Low conduction losses due to low on-state resistance  Suitable for high frequency applications due to fast switching characteristics 1.
3 Applications  High frequency computer motherboard DC-to-DC convertors  OR-ing applicationss 1.
4 Quick reference data Table 1.
Quick reference data Symbol VDS ID Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 Ptot total power dissipation Static characteristics Tmb = 25 °C; see Figure 2 RDSon drain-source on-state resistance V...


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