SEMB10
PNP Silicon Digital
Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two ( galvanic) internal isolated
Transistors with good matching in one package • Built in bias resistors ( R1=2,2kΩ, R2 =47kΩ)
C1 6 B2 5 E2 4
4 5 3 6 1 2
R2 R1 TR1 R2 1 E1 2 B1 3 C2
EHA07173
TR2 R1
Type SEMB10
Maximum Ratings Parameter
Marking W5
Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Value 50 50 5 10 100 250 150 -65 .
.
.
150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 75 °C Junction tempe...