DatasheetsPDF.com

SEMB3 Datasheet PDF

Infineon Technologies AG
Part Number SEMB3
Manufacturer Infineon Technologies AG
Title PNP Silicon Digital Transistor Preliminary data
Description SEMB3 PNP Silicon Digital Transistor Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two ( galvanic) internal ...
Features istics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, ...

File Size 143.53KB
Datasheet PDF File SEMB3 PDF File


SEMB3 SEMB3 SEMB3




Similar Ai Datasheet

SEM1605TC : SEM1605TC THERMOCOUPLE DIN RAIL TRANSMITTER THERMOCOUPLE TYPES K J E N T R S L U B C G (4 to 20) mA TWO WIRE OUTPUT USER OUTPUT TRIM (ZERO and SPAN) SIMPLE CONFIGURATION VIA USB PORT FREE CONFIGURATION SOFTWARE INTRODUCTION The SEM1605TC is a DIN rail mounted temperature transmitter from Status Instruments. It has been designed to accept most common thermocouple sensor inputs and provide the user with a standard two wire (4 to 20) mA output signal. Galvanic isolation is provided between input and output and all temperature ranges are linear to temperature. Designed for ease of use, our latest USB interface is fitted for quick and easy configuration. Just connect a standard USB cable between .

SEM1620 : UNIVERSAL DIN RAIL TRANSMITTER SEM1620 SIMPLE CONFIGURATION VIA USB PORT UNIVERSAL PT100, THERMOCOUPLE, mV, mA Input ISOLATED INPUT PUSH BUTTON USER TRIM THREE WIRE ISOLATED VOLTAGE OUTPUT INTRODUCTION The SEM1620 is the new generation DIN rail mounted temperature amplifier from Status Instruments. It has been designed to accept most common process and temperature sensor inputs and provide the user with a three wire voltage output signal. Isolation is provided between input and output and all temperature ranges are linear to temperature. Designed for ease of use, our latest USB interface is fitted for quick and easy configuration. Just connect a standard USB cable between the SEM1620 and yo.

SEM2005 : www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ .

SEM2006 : www.DataSheet4U.net .

SEMB1 : SEMB1 PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two ( galvanic) internal isolated Transistors with good matching in one package • Built in bias resistor (R1=22kΩ, R2 =22kΩ) C1 6 B2 5 E2 4 4 5 3 6 1 2 R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07173 TR2 R1 Type SEMB1 Maximum Ratings Parameter Marking WO Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj T stg Value 50 50 10 30 100 250 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation , TS = 75 °C Junction tempe.

SEMB10 : SEMB10 PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two ( galvanic) internal isolated Transistors with good matching in one package • Built in bias resistors ( R1=2,2kΩ, R2 =47kΩ) C1 6 B2 5 E2 4 4 5 3 6 1 2 R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07173 TR2 R1 Type SEMB10 Maximum Ratings Parameter Marking W5 Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Value 50 50 5 10 100 250 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 75 °C Junction tempe.

SEMB11 : SEMB11 PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two ( galvanic) internal isolated Transistors with good matching in one package • Built in bias resistor ( R1 =10kΩ, R2 =10kΩ) C1 6 B2 5 E2 4 4 5 3 6 1 2 R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07173 TR2 R1 Type SEMB11 Maximum Ratings Parameter Marking WM Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj T stg Value Unit Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation , TS = 75 °C Junction temperature Storage temperature Thermal R.

SEMB13 : SEMB13 PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two ( galvanic) internal isolated Transistors with good matching in one package • Built in bias resistors ( R1=4,7kΩ, R2 =47kΩ) C1 6 B2 5 E2 4 4 5 3 6 1 2 R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07173 TR2 R1 Type Marking Pin Configuration Package SEMB13 Maximum Ratings Parameter WB 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Value 50 50 5 15 100 250 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 75 °C Junction t.

SEMB2 : SEMB2 PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two ( galvanic) internal isolated Transistors with good matching in one package • Built in bias resistor ( R1 =47kΩ, R2=47kΩ) C1 6 B2 5 E2 4 4 5 3 6 1 2 R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07173 TR2 R1 Type Marking Pin Configuration Package SEMB2 Maximum Ratings Parameter WR 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Value 50 50 10 50 70 250 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 75 °C Junction tempe.

SEMB4 : SEMB4 PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two ( galvanic) internal isolated Transistors with good matching in one package • Built in bias resistor ( R1 =10kΩ) C1 6 B2 5 E2 4 4 5 3 6 1 2 R1 TR1 R1 TR2 1 E1 2 B1 3 C2 EHA07266 Type SEMB4 Maximum Ratings Parameter Marking WW Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj T stg Value Unit Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation , TS = 75 °C Junction temperature Storage temperature Thermal Resistance 50 5.

SEMB9 : SEMB9 PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two ( galvanic) internal isolated Transistors with good matching in one package • Built in bias resistor (R1=10kΩ, R2 =47kΩ) C1 6 B2 5 E2 4 4 5 3 6 1 2 R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07173 TR2 R1 Type SEMB9 Maximum Ratings Parameter Marking WN Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj T stg Value 50 50 6 20 100 250 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation , TS = 75 °C Junction temper.

SEMD10 : SEMD10 NPN/PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated NPN/PNP Transistors in one package • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) Tape loading orientation Top View 3 2 1 4 5 3 6 1 2 Marking on SOT666 package (for example W R) corresponds to pin 1 of device Position in tape: pin 1 same of feed hole side C1 6 B2 5 E2 4 R2 R1 TR1 R2 1 2 B1 3 C2 EHA07176 TR2 R1 4 5 6 Direction of Unreeling Type SEMD10 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 75 °C Jun.

SEMD12 : SEMD12 NPN/PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated NPN/PNP Transistors in one package • Built in bias resistor (R1=47kΩ, R2 =47kΩ) Tape loading orientation Top View 3 2 1 4 5 3 6 1 2 Marking on SOT666 package (for example W R) corresponds to pin 1 of device Position in tape: pin 1 same of feed hole side C1 6 B2 5 E2 4 R2 R1 TR1 R2 1 2 B1 3 C2 EHA07176 TR2 R1 4 5 6 Direction of Unreeling Type SEMD12 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 75 °C Jun.

SEMD13 : SEMD13 NPN/PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated NPN/PNP Transistors in one package • Built in bias resistor (R1=4.7kΩ, R2 =47kΩ) Tape loading orientation Top View 3 2 1 4 5 3 6 1 2 Marking on SOT666 package (for example W R) corresponds to pin 1 of device Position in tape: pin 1 same of feed hole side C1 6 B2 5 E2 4 R2 R1 TR1 R2 1 2 B1 3 C2 EHA07176 TR2 R1 4 5 6 Direction of Unreeling Type SEMD13 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 75 °C Ju.

SEMD2 : SEMD2 NPN/PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated NPN/PNP Transistors in one package • Built in bias resistor (R1=22kΩ, R2 =22kΩ) Tape loading orientation Top View 3 2 1 4 5 3 6 1 2 Marking on SOT666 package (for example W R) corresponds to pin 1 of device Position in tape: pin 1 same of feed hole side C1 6 B2 5 E2 4 R2 R1 TR1 R2 1 2 B1 3 C2 EHA07176 TR2 R1 4 5 6 Direction of Unreeling Type SEMD2 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 75 °C Junct.

SEMD3 : SEMD3 NPN/PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated NPN/PNP Transistors in one package • Built in bias resistor (R1=10kΩ, R2 =10kΩ) Tape loading orientation Top View 3 2 1 4 5 3 6 1 2 Marking on SOT666 package (for example W R) corresponds to pin 1 of device Position in tape: pin 1 same of feed hole side C1 6 B2 5 E2 4 R2 R1 TR1 R2 1 2 B1 3 C2 EHA07176 TR2 R1 4 5 6 Direction of Unreeling Type SEMD3 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 75 °C Junct.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)